Band Anti-Crossing Model in Dilute-As GaNAs Alloys
نویسندگان
چکیده
منابع مشابه
InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters
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1 Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720-8197, USA 2 School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK 3 Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA 4 Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2019
ISSN: 2045-2322
DOI: 10.1038/s41598-019-41286-y